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在金属衬底上六角密排结构的si薄膜的外延生长
首发时间：2023-07-19
摘要：本文利用低温扫描隧道显微镜(stm)研究了si薄膜在金属衬底cd(0001)上的生长动力学。在低温沉积条件下si原子形成三角形的树枝岛，表明在生长过程中存在各向异性的岛边扩散。经过高温退火后，三角形的树枝岛转变为六边形的紧致岛。此外，受衬底量子阱态的影响，位于不同衬底台面上的si原子层表现出不同的高度。通过高分辩的stm图，我们发现第一、第二和第三si原子层均具有赝形的1×1结构。特别是，第一层和第二层的三角树枝岛的方向相反，表明si原子按照六角密排(hcp)方式进行堆积。上述结果为在金属衬底上制备纯净的si薄膜和理解si与金属之间的相互作用提供了重要的参考。
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epitaxial growth of silicon films with hexagonal closed packed structure on metal substrate
abstract：we have studied the epitaxial growth of si thin films on cd(0001) with a low-temperature scanning tunneling microscopy (stm). when deposited at lt, si atoms form the dendritic islands with trigonal shapes, indicating the existence of anisotropic edge diffussion in the process of si films grwoth. after annealing to higher temperature, the trigonal dendritic si islands become hexagonal compact islands. moreover, the 2d si islands located on two different substrate terraces exhibit different height due to the influence of quantum-well states in the cd substrate. based on the high-resolution stm images, it is observed that the first, second, and third si layers show the pseudomorphic 1×1 structure. in particular, the first and second layer islands reveal the opposite triangles, indicating the hcp stacking of si atoms. these results provide important information for the growth of pristine si films on metal substrates and the understanding of si-metal interaction.
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在金属衬底上六角密排结构的si薄膜的外延生长
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